ST9402 Datasheet PDF | Stanson Technology

Stanson Technology ST9402

ST9402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

Part No.	ST9402
Datasheet	ST9402 Download
Manufacturer	Stanson Technology
Description	N-Channel MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-23 FEATURE z z z S 2 2.Source 3.Drain z z 20V/3.6A, RDS(ON) = 76mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 90 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 D G 1 1.Gate PART MARKING SOT-23 3 S02YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST9402SRG Package SOT-23 Part Marking S02YA ※ Process Code : A ~ Z ; a ~ z ※ ST9402SRG S : SOT23 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST9402 2005. V1 N Channel Enhancement Mode MOSFET ST9402 3.6A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25...