ST9435A Datasheet PDF | Stanson Technology

Stanson Technology ST9435A

ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, notebook computer power management, and other battery powered circuits.

Part No.	ST9435A
Datasheet	ST9435A Download
Manufacturer	Stanson Technology
Description	P-Channel MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE z z z z z z PART MARKING SOP-8 -30V/-5.6A, RDS(ON) = 57mΩ (Typ.) @VGS = -10V -30V/-5.0A, RDS(ON) = 72mΩ @VGS = -6.0V -30V/-4.4A, RDS(ON) = 95mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design ST9435A ORDERING INFORMATION Part Number ST9435AS8RG ST9435AS8TG Package SOP-8P SOP-8P Part Marking ST9435A ST9435A ※ Process Code : A ~ Z ; a ~ z ※ ST9435AS8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ ST9435AS8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. ST9435A 2007. V1 P Channel Enhancement Mode MOSFET - 5.6A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction...