Datasheet4U Logo Datasheet4U.com

STN4480 - 14A N-Channel Enhancement Mode MOSFET

Description

STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet preview – STN4480

Datasheet Details

Part number STN4480
Manufacturer Stanson Technology
File Size 743.49 KB
Description 14A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN4480 Datasheet
Additional preview pages of the STN4480 datasheet.

📁 Similar Datasheet

  • STN4420 - 30V N-Channel Enhancement Mode MOSFET (Semtron)
  • STN442D - N-Channel Enhancement Mode MOSFET (Stanson)
  • STN4438 - N-Channel Enhancement Mode MOSFET (Stanson)
  • STN4438 - 60V N-ChanneI MOSFET (UMW)
  • STN444DN - N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4260 - 18A N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4346 - 6.8A N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4392 - N-Channel Enhancement Mode MOSFET (STANSON)
  • STN456DN - N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4826 - Dual N-Channel Enhancement Mode MOSFET (Stanson)
Other Datasheets by Stanson Technology

Full PDF Text Transcription

Click to expand full text
STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 40V/14.0A, RDS(ON) = 13mΩ (Typ.) @VGS = 10V 40V/5.0A, RDS(ON) = 15mΩ @VGS = 4.
Published: |