STN4488L Datasheet PDF | Stanson Technology

Stanson Technology STN4488L

STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.

Part No.	STN4488L
Datasheet	STN4488L Download
Manufacturer	Stanson Technology
Description	MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE 30V/20A, RDS(ON) = 3.8mΩ (Typ.) @VGS = 10V 30V/18A, RDS(ON) = 5.2mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 Y:Year Code A: Week Code M: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STN4488L 2009. V1 STN4488L N Channel Enhancement Mode MOSFET 20.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol 10 Sec Steady state Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient VGSS ID IDM IS PD TJ TSTG RθJA ±20 20 15 17 12 80 3.0 3.1 1.7 20 1.1 -55/150 -55/150 Typ 59 Max 75 V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.