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STN4488L - MOSFET

Description

STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

It is suitable for the power management applications in the portable or battery powered system.

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Datasheet Details

Part number STN4488L
Manufacturer Stanson Technology
File Size 633.13 KB
Description MOSFET
Datasheet download datasheet STN4488L Datasheet
Additional preview pages of the STN4488L datasheet.

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Full PDF Text Transcription

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STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE 30V/20A, RDS(ON) = 3.8mΩ (Typ.) @VGS = 10V 30V/18A, RDS(ON) = 5.2mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 Y:Year Code A: Week Code M: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4488L 2009.
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