Datasheet Summary
N Channel Enhancement Mode MOSFET
6.8A
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE z 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package...