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STN4412S8TG - MOSFET

Download the STN4412S8TG datasheet PDF. This datasheet also covers the STN4412 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STN4412-StansonTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STN4412S8TG
Manufacturer Stanson Technology
File Size 479.68 KB
Description MOSFET
Datasheet download datasheet STN4412S8TG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE z 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.