STN4426 Datasheet PDF | Stanson Technology

Stanson Technology STN4426

STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

Part No.	STN4426
Datasheet	STN4426 Download
Manufacturer	Stanson Technology
Description	MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE 20V/8.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 4.5V 20V/7.0A, RDS(ON) = 36mΩ @VGS = 2.5V 20V/3.0A, RDS(ON) = 42mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STN4426 SYA S: Subcontractor Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STN4426 2009. V1 STN4426 N Channel Enhancement Mode MOSFET 8.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 20 ±12 7.4 6.0 35 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.