Datasheet Summary
N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
- 20V/8.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 4.5V
- 20V/7.0A, RDS(ON) = 36mΩ @VGS = 2.5V
- 20V/3.0A, RDS(ON) = 42mΩ @VGS = 1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance...