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STN4920S8TG - MOSFET

This page provides the datasheet information for the STN4920S8TG, a member of the STN4920 MOSFET family.

Description

STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

It is suitable for the power management applications in the portable or battery powered system.

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Datasheet preview – STN4920S8TG

Datasheet Details

Part number STN4920S8TG
Manufacturer Stanson Technology
File Size 478.31 KB
Description MOSFET
Datasheet download datasheet STN4920S8TG Datasheet
Additional preview pages of the STN4920S8TG datasheet.

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Full PDF Text Transcription

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STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V z 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.
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