STN4946 Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter Li-ion Battery , power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE - 60V/12A, RDS(ON) = 44mΩ (Typ.) @VGS = 10V - 60V/8.0A, RDS(ON) =50mΩ @VGS = 4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - SOP-8 package design PART MARKING SOP-8 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2007, Stanson Corp. STN4946 2009. V1 Dual N Channel Enhancement Mode MOSFET 12A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃...