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STN4946 - MOSFET

Description

transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4946
Manufacturer Stanson Technology
File Size 413.62 KB
Description MOSFET
Datasheet download datasheet STN4946 Datasheet
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Full PDF Text Transcription

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STN4946 Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer Li-ion Battery , power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE � 60V/12A, RDS(ON) = 44mΩ (Typ.) @VGS = 10V � 60V/8.0A, RDS(ON) =50mΩ @VGS = 4.
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