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STN4972S8TG - MOSFET

This page provides the datasheet information for the STN4972S8TG, a member of the STN4972 MOSFET family.

Description

STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

It is suitable for the power management applications in the portable or battery powered system.

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Datasheet Details

Part number STN4972S8TG
Manufacturer Stanson Technology
File Size 413.20 KB
Description MOSFET
Datasheet download datasheet STN4972S8TG Datasheet
Additional preview pages of the STN4972S8TG datasheet.

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Full PDF Text Transcription

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STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.
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