ST4828N Datasheet PDF

Stanson ST4828N

The ST4828N is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer Li-ion Battery , power management and other battery powered circuits where high-side switching .

Part No.	ST4828N
Datasheet	ST4828N Download
Manufacturer	Stanson
Description	Dual N Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE 60V/10A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/6A, RDS(ON) =35mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 1 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. ST4828N 2008. V1 Free Datasheet N ST4828 ST4828N Dual N Channel Enhancement Mode MOSFET 10A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 60 ±20 8.0 6.0 30 11 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.