STN442D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
60V/20.0A, RDS(ON) = 24mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 31mΩ @VGS = 4.5V| Part number | STN442D |
|---|---|
| Manufacturer | Stanson |
| File Size | 736.94 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 STN442D Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STN4420 | 30V N-Channel Enhancement Mode MOSFET | Semtron |
| STN4426 | MOSFET | Stanson Technology |
| STN4402 | MOSFET | Stanson Technology |
| STN4412 | MOSFET | Stanson Technology |
| STN4412S8RG | MOSFET | Stanson Technology |
| Part Number | Description |
|---|---|
| STN4438 | N-Channel Enhancement Mode MOSFET |
| STN444DN | N-Channel Enhancement Mode MOSFET |
| STN4260 | 18A N-Channel Enhancement Mode MOSFET |
| STN4346 | 6.8A N-Channel Enhancement Mode MOSFET |
| STN4392 | N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
