SGB100N025 - 100V N-Channel MOSFET

Product Overview

Part number	SGB100N025
Manufacturer	Super Semiconductor
File Size	620.46 KB
Description	100V N-Channel MOSFET
Datasheet	SGB100N025 Datasheet
Additional preview pages of the SGB100N025 datasheet.

The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS 100V.
ID (at Vgs=10V) 180A.
Extremely low on-resistance RDS(on).
Extremely Qg×RDS(on) product(FOM).
100% avalanche tested SGB100N025 SGP100N025 SGW100N025 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pul.

📁 Similar Datasheet

Other Datasheets by Super Semiconductor

Published: Aug 26, 2025 |