SGB100N025 - 100V N-Channel MOSFET

Product Overview

Part number	SGB100N025
Manufacturer	Super Semiconductor
File Size	620.46 KB
Description	100V N-Channel MOSFET
Datasheet	SGB100N025 Datasheet
Additional preview pages of the SGB100N025 datasheet.

The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge.

VDS 100V.
ID (at Vgs=10V) 180A.
Extremely low on-resistance RDS(on).
Extremely Qg×RDS(on) product(FOM).
100% avalanche tested SGB100N025 SGP100N025 SGW100N025 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pul.

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Published: Aug 26, 2025 |