SGB100N025 Datasheet | Super Semiconductor

Description The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and gate charge. This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies. Features - VDS 100V - ID (at Vgs=10V) 180A - Extremely low on-resistance RDS(on) - Extremely Qg×RDS(on) product(FOM) - 100% avalanche tested SGP100N025 SGW100N025 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1m H (Note 5) Power Dissipation - TC = 25℃ (Note 2) Operating and Storage Temperature Range - Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink Typ. RθJA Thermal Resistance, Junction-to-Ambient ©2015 Super Semiconductor Corporation SGB100N025/SGP100N025/SGW100N025 Rev.1.1 .supersemi..cn TO-247 SGB_P_W100N025 100 180- 114- 720- ±20 55 1512 175 -55 to +150 SGB_P_W100N025 0.7 0.5...