SGB100N042 - 100V N-Channel MOSFET

Product Overview

Part number	SGB100N042
Manufacturer	Super Semiconductor
File Size	513.55 KB
Description	100V N-Channel MOSFET
Datasheet	SGB100N042 Datasheet
Additional preview pages of the SGB100N042 datasheet.

The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS 100V.
ID (at Vgs=10V) 120A.
Typ. RDS(on) (at Vgs=10V) 3.7mΩ.
Low Gate Charge (typ. Qg = 71nC).
100% avalanche tested SGB100N042 SGP100N042 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Continuous Drain Current - TC = 25℃ - TC = 100℃ Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1mH (Note 5) Power Diss.

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Published: Aug 26, 2025 |