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SGP100N025 - 100V N-Channel MOSFET

Datasheet Summary

Description

The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge.

Features

  • VDS 100V.
  • ID (at Vgs=10V) 180A.
  • Extremely low on-resistance RDS(on).
  • Extremely Qg×RDS(on) product(FOM).
  • 100% avalanche tested SGB100N025 SGP100N025 SGW100N025 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pul.

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Datasheet Details

Part number SGP100N025
Manufacturer Super Semiconductor
File Size 616.79 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet SGP100N025 Datasheet
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Full PDF Text Transcription

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET Description The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge. This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies.
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