SGP100N042 Overview
Description
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge.
Key Features
- ID (at Vgs=10V) 120A
- Typ. RDS(on) (at Vgs=10V) 3.7mΩ
- Low Gate Charge (typ. Qg = 71nC)
- 100% avalanche tested SGB100N042 SGP100N042
