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SGP100N042 Datasheet 100v N-channel MOSFET

Manufacturer: Super Semiconductor

Overview: SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 .supersemi..

General Description

The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and gate charge.

This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies.

Key Features

  • VDS 100V.
  • ID (at Vgs=10V) 120A.
  • Typ. RDS(on) (at Vgs=10V) 3.7mΩ.
  • Low Gate Charge (typ. Qg = 71nC).
  • 100% avalanche tested SGB100N042 SGP100N042 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Continuous Drain Current - TC = 25℃ - TC = 100℃ Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1mH (Note 5) Power Diss.

More Datasheets from Super Semiconductor

Part Number Description
SGP100N025 100V N-Channel MOSFET

SGP100N042 Distributor