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SGP100N042 - 100V N-Channel MOSFET

General Description

The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge.

Key Features

  • VDS 100V.
  • ID (at Vgs=10V) 120A.
  • Typ. RDS(on) (at Vgs=10V) 3.7mΩ.
  • Low Gate Charge (typ. Qg = 71nC).
  • 100% avalanche tested SGB100N042 SGP100N042 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltage Continuous Drain Current - TC = 25℃ - TC = 100℃ Drain Current - Pulsed (Note 1) Gate-Source voltage Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1mH (Note 5) Power Diss.

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Datasheet Details

Part number SGP100N042
Manufacturer Super Semiconductor
File Size 511.52 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet SGP100N042 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.supersemi.com.cn SGB100N042/SGP100N042 100V N-Channel MOSFET SGB100N042/SGP100N042 100V N-Channel MOSFET Description The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge. This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies. Features • VDS 100V • ID (at Vgs=10V) 120A • Typ. RDS(on) (at Vgs=10V) 3.7mΩ • Low Gate Charge (typ.