SSB65R600S2 Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching...
SSB65R600S2 Key Features
- Multi-Epi process SJ-FET
- 700V @TJ = 150 ℃
- Typ. RDS(on) = 0.54Ω
- Ultra Low Gate Charge (typ. Qg = 11.8nC)
- 100% avalanche tested