SSB65R600S2 Datasheet 650v N-channel Super-junction MOSFET

Manufacturer: Super Semiconductor

Overview: SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R600S2 Rev. 1.2 Jun. 2022 www.supersemi.com.

Datasheet Details

Part number	SSB65R600S2
Manufacturer	Super Semiconductor
File Size	956.65 KB
Description	650V N-Channel Super-Junction MOSFET
Datasheet	SSB65R600S2-SuperSemiconductor.pdf

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Key Features

Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 0.54Ω.
Ultra Low Gate Charge (typ. Qg = 11.8nC).
100% avalanche tested SSF65R600S2 SSP65R600S2 SSB65R600S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetiti.

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