SSB80R380S - 800V N-Channel MOSFET

Product Overview

Datasheet Details

Part number	SSB80R380S
Manufacturer	Super Semiconductor
File Size	819.16 KB
Description	800V N-Channel MOSFET
Datasheet	SSB80R380S Datasheet
Additional preview pages of the SSB80R380S datasheet.

Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
850V @TJ = 150 ℃.
Typ. RDS(on) = 0.36Ω.
Ultra Low Gate Charge (typ. Qg = 17.2nC).
100% avalanche tested SSB80R380S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed VGSS EAS IAS dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche current, repetitive or not-repetitive (pulse width limited by T.

📁 Similar Datasheet

SSB-0218 - SINGLE-SIDEBAND DOUBLE-BALANCED MIXERS (Marki)
SSB11N60C2 - Power Transistor (infineon)
SSB20N60S - N-Channel 600V Power MOSFET (VBsemi)
SSB302 - ZCB snubber (UTC)
SSB303 - ZCB snubber (UTC)
SSBD10L100CT - Schottky Barrier Rectifier (Silikron Semiconductor)
SSBD10L100CTF - Schottky Barrier Rectifier (Silikron Semiconductor)
SSBM3020-C - Dual N-Channel MOSFET (SeCoS)

Other Datasheets by Super Semiconductor

SSB60R140SFD - 600V N-Channel Super-Junction MOSFET
SSB65R600S2 - 650V N-Channel Super-Junction MOSFET
SSB90R240S2 - 900V N-Channel Super-Junction MOSFET

Published: Jul 19, 2025 |