SSB80R380S Datasheet 800v N-channel MOSFET

Manufacturer: Super Semiconductor

Overview: SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SSB80R380S Rev. 1.2 Jun. 2022 www.supersemi.com.

Datasheet Details

Part number	SSB80R380S
Manufacturer	Super Semiconductor
File Size	819.16 KB
Description	800V N-Channel MOSFET
Datasheet	SSB80R380S-SuperSemiconductor.pdf

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Key Features

Multi-Epi process SJ-FET.
850V @TJ = 150 ℃.
Typ. RDS(on) = 0.36Ω.
Ultra Low Gate Charge (typ. Qg = 17.2nC).
100% avalanche tested SSB80R380S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed VGSS EAS IAS dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche current, repetitive or not-repetitive (pulse width limited by T.

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