SSB80R380S Datasheet | Super Semiconductor

Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. September, 2013 SJ-FET Features - Multi-Epi process SJ-FET - 850V @TJ = 150 ℃ - Typ. RDS(on) = 0.36Ω - Ultra Low Gate Charge (typ. Qg = 17.2n C) - 100% avalanche tested Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed VGSS EAS IAS dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Peak Diode Recovery dv/dt d Vds/dt Drain Source voltage slope (Vds=640V) (Note 1) (Note 2) (Note 3) PD TJ, TSTG TL Power Dissipation (TC = 25℃) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/16” from Case for 10 Seconds - Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink Typ. RθJA Thermal Resistance, Junction-to-Ambient ©2012 Super Semiconductor Corporation SSB80R380S Rev. 1.2 .supersemi..cn 800 13.6- 8.6- 40- ±30 94 2.5 15 50 104 -55 to +150 260 1.2 0.5...