Datasheet4U Logo Datasheet4U.com

SSF60R099S2E - 600V N-Channel Super-Junction MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 85mΩ.
  • Ultra Low Gate Charge (typ. Qg = 54nC).
  • 100% avalanche tested SSF60R099S2E SSP60R099S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repe.

📥 Download Datasheet

Datasheet Details

Part number SSF60R099S2E
Manufacturer Super Semiconductor
File Size 726.67 KB
Description 600V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSF60R099S2E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSF6005 N-Channel MOSFET GOOD-ARK
SSF6005 MOSFET Silikron Semiconductor
SSF6007 MOSFET Silikron Semiconductor
SSF6007 50V P-Channel MOSFET GOOD-ARK
SSF6008 MOSFET Silikron Semiconductor Co

Other Datasheets by Super Semiconductor

Part Number Description
SSF60R099SFD 600V N-Channel Super-Junction MOSFET
SSF60R280SFD 600V N-Channel Super-Junction MOSFET
SSF65R099SFD 650V N-Channel Super-Junction MOSFET
SSF65R130S2 650V N-Channel Super-Junction MOSFET
SSF65R190S2E 650V N-Channel Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSF60R099S2E/SSP60R099S2E 600V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF60R099S2E/SSP60R099S2E 600V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • Multi-Epi process SJ-FET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 85mΩ • Ultra Low Gate Charge (typ.