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SSF65R600S2 - 650V N-Channel Super-Junction MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.54Ω.
  • Ultra Low Gate Charge (typ. Qg = 11.8nC).
  • 100% avalanche tested SSF65R600S2 SSP65R600S2 SSB65R600S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetiti.

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Datasheet Details

Part number SSF65R600S2
Manufacturer Super Semiconductor
File Size 956.65 KB
Description 650V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSF65R600S2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R600S2 Rev. 1.2 Jun. 2022 www.supersemi.com.cn SSF65R600S2/SSP65R600S2/SSB65R600S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF65R600S2/SSP65R600S2/SSB65R600S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.