SST60R280SFD
SST60R280SFD is 600V N-Channel Super-Junction MOSFET manufactured by Super Semiconductor.
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
SSF60R280SFD
SSP60R280SFD
Features
- Multi-Epi process SJ-FET
- Fast-Recovery body diode
- Extremely Low Reverse Recovery Charge
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.24Ω
- Ultra Low Gate Charge (typ. Qg = 23n C)
- 100% avalanche tested
TO-252
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS EAS IAS
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) dv/dt
Peak Diode Recovery dv/dt
(Note 3)
SSP_T60R280SFD
600 15- 9.5- 45
±30
SSF60R280SFD
40 d Vds/dt Drain Source voltage slope (Vds=480V)
PD TJ, TSTG
Power Di SSTpation (TC = 25℃)
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/16” from Case for 10...
