Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- Multi-Epi process SJ-FET.
- Fast-Recovery body diode.
- Extremely Low Reverse Recovery Charge.
- 650V @TJ = 150 ℃.
- Typ. RDS(on) = 0.24Ω.
- Ultra Low Gate Charge (typ. Qg = 23nC).
- 100% avalanche tested
SST60R280SFD
TO-252
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS EAS IAS
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Puls.
SST60R280SFD Datasheet
