SST65R190S3 Datasheet | Super Semiconductor

Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features - Multi-Epi process SJ-FET - 700V @TJ = 150 ℃ - Typ. RDS(on) = 160mΩ - Ultra Low Gate Charge (typ. Qg = 29n C) - 100% avalanche tested - Integrated Zener diode for high ESD robustness (>2k V HBM) TO-252 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Peak Diode Recovery dv/dt (Note 3) d Vds/dt Drain Source voltage slope (Vds=480V) Power Dissipation (TC = 25℃) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/16” from Case for 10 Seconds - Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink Typ. RθJA Thermal Resistance, Junction-to-Ambient ©2012 Super Semiconductor Corporation SST65R190S3 Rev. 1.2...