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SST65R190S3 - 650V N-Channel Super-Junction MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 160mΩ.
  • Ultra Low Gate Charge (typ. Qg = 29nC).
  • 100% avalanche tested.
  • Integrated Zener diode for high ESD robustness (>2kV HBM) SST65R190S3 TO-252 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalan.

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Datasheet Details

Part number SST65R190S3
Manufacturer Super Semiconductor
File Size 633.65 KB
Description 650V N-Channel Super-Junction MOSFET
Datasheet download datasheet SST65R190S3 Datasheet

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅲ SST65R190S3 Rev. 1.2 Feb. 2022 www.supersemi.com.cn SST65R190S3 650V N-Channel Super-Junction MOSFET Gen-Ⅲ SST65R190S3 650V N-Channel Super-Junction MOSFET Gen-Ⅲ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.