SST65R190S3 Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching...
SST65R190S3 Key Features
- Multi-Epi process SJ-FET
- 700V @TJ = 150 ℃
- Typ. RDS(on) = 160mΩ
- Ultra Low Gate Charge (typ. Qg = 29nC)
- 100% avalanche tested
- Integrated Zener diode for high ESD robustness (>2kV HBM)