SSW60R070S2E Overview
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Key Features
- Multi-Epi process SJ-FET
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 60mΩ
- Ultra Low Gate Charge (typ. Qg = 76nC)
- 100% avalanche tested SSW60R070S2E TO-247
