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TN5335 Datasheet N-channel Vertical Dmos Fet

Manufacturer: Supertex Inc

Overview: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS.

Datasheet Details

Part number TN5335
Manufacturer Supertex Inc
File Size 657.36 KB
Description N-Channel Vertical DMOS FET
Datasheet TN5335_SupertexInc.pdf

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Key Features

  • Low threshold.
  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.
  • Complementary N- and P-channel devices.

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