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TP2510 - P-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • Low threshold (-2.4V max. ).
  • High input impedance.
  • Low input capacitance (125pF max. ).
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet Details

Part number TP2510
Manufacturer Supertex Inc
File Size 349.94 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TP2510 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. TP2510 P-Channel Enhancement-Mode Vertical DMOS FET Features ►►Low threshold (-2.4V max.) ►►High input impedance ►►Low input capacitance (125pF max.) ►►Fast switching speeds ►►Low on-resistance ►►Free from secondary breakdown ►►Low input and output leakage Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.