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VP0106 Datasheet PDF

Supertex Inc VP0106

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Part No. VP0106
Datasheet VP0106 Download
Manufacturer
Supertex Inc
Description P-Channel Enhancement-Mode Vertical DMOS FETs
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VP0106 datasheet page 1 preview

FEATURES

►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain

APPLICATIONS

►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

GENERAL DESCRIPTION

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induc
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