Datasheet Details
| Part number | VP0106 |
|---|---|
| Manufacturer | Microchip Technology |
| File Size | 748.85 KB |
| Description | P-Channel Vertical DMOS FET |
| Datasheet | VP0106-Microchip.pdf |
|
|
Overview: VP0106 P-Channel Enhancement-Mode Vertical DMOS FET.
| Part number | VP0106 |
|---|---|
| Manufacturer | Microchip Technology |
| File Size | 748.85 KB |
| Description | P-Channel Vertical DMOS FET |
| Datasheet | VP0106-Microchip.pdf |
|
|
|
The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
VP0106 | P-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
 |
VP0106N6 | P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | Supertex |
|
VP0106N7 | P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | Supertex |
| Part Number | Description |
|---|---|
| VP0808 | P-Channel Enhancement-Mode Vertical DMOS FET |