VP0109 Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and...
VP0109 Key Features
- Free from secondary breakdown -- Low power drive requirement -- Ease of paralleling -- Low CISS and fast switching speed