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VP02C - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Datasheet Summary

Features

  • D Freedom from secondary breakdown o Low power drive requirement D Ease of paralleling o Low CISS and fast switching speeds D Excellent thermal stability o Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP02C
Manufacturer Supertex Inc
File Size 231.13 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VP02C Datasheet
Additional preview pages of the VP02C datasheet.

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Full PDF Text Transcription

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" !iupertexinc. VP02C I P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVcss I BVOGS -160V -200V ROS(ON) (max) 160 160 IO(ON) (min) O.7SA O.7SA TO-39 Order Number I Package TO-92 VP0216N2 VP0216N3 VP0220N2 VP0220N3 TO-220 VP0216NS VP0220NS Features D Freedom from secondary breakdown o Low power drive requirement D Ease of paralleling o Low CISS and fast switching speeds D Excellent thermal stability o Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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