VP02C - P-Channel Enhancement-Mode Vertical DMOS Power FETs
Supertex Inc
Key Features
D Freedom from secondary breakdown
o Low power drive requirement
D Ease of paralleling
o Low CISS and fast switching speeds
D Excellent thermal stability
o Integral Source-Drain diode
D High input impedance and high gain D Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.
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VP02C
I
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVcss I BVOGS
-160V
-200V
ROS(ON)
(max)
160
160
IO(ON)
(min)
O.7SA
O.7SA
TO-39
Order Number I Package TO-92
VP0216N2
VP0216N3
VP0220N2
VP0220N3
TO-220 VP0216NS VP0220NS
Features
D Freedom from secondary breakdown
o Low power drive requirement
D Ease of paralleling
o Low CISS and fast switching speeds
D Excellent thermal stability
o Integral Source-Drain diode
D High input impedance and high gain D Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
VP02C Datasheet
