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DN1509 Datasheet PDF

Supertex DN1509

DN1509 is suitable for high voltage transient protection for LDO in automobile applications during “load dump” conditions. This low threshold, depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Part No. DN1509
Datasheet DN1509 Download
Manufacturer
Supertex
Description N-Channel Depletion-Mode Vertical DMOS FET
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DN1509 datasheet page 1 preview

FEATURES

► ► ► ► ► ► High input impedance Low input capacitance Fast switching speeds Low ON-resistance Free from secondary breakdown Low input and output leakages

GENERAL DESCRIPTION

The Supertex Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

APPLICATIONS

► ► ► ► ► ► Normally-on switches Battery operated systems Converters Linear amplifiers Constant current sources Telecom Ordering Information Device DN1509 Package Option TO-243AA (SOT-89) DN1509N8-G Product marking for TO-243AA: BVDSX/BVDGX 90V RDS(ON) (max) 6.0Ω IDSS (typ) 540mA where DN5A = 2-week alpha date code -G indicates package is RoHS compliant (‘Green’)

ABSOLUTE MAXIMUM RATINGS

Parameter Drain to source volt...
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