Supertex DN2450
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.FEATURES
►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakageAPPLICATIONS
►► Normally-on switches ►► Battery operated systems ►► Voltage to current converters ►► Constant current sources ►► Current and voltage limitersGENERAL DESCRIPTION
These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a