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DN3535N8-G - N-Channel Depletion-Mode Vertical DMOS FETs

This page provides the datasheet information for the DN3535N8-G, a member of the DN3535 N-Channel Depletion-Mode Vertical DMOS FETs family.

Datasheet Summary

Description

This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Features

  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet preview – DN3535N8-G

Datasheet Details

Part number DN3535N8-G
Manufacturer Supertex
File Size 192.60 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet DN3535N8-G Datasheet
Additional preview pages of the DN3535N8-G datasheet.

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Full PDF Text Transcription

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Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs DN3535 Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Power supply circuits ►► Telecom General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
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