DN3535 Datasheet | Supertex

Features - - High input impedance - - Low input capacitance - - Fast switching speeds - - Low on-resistance - - Free from secondary breakdown - - Low input and output leakage Applications - - Normally-on switches - - Solid state relays - - Converters - - Linear amplifiers - - Constant current sources - - Power supply circuits - - Tele General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option Packing DN3535N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / Ro HS pliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / Ro HS pliant. Absolute Maximum Ratings Parameter Value Product Summary BVDSX/BVDGX RDS(ON) (max) 350V 10Ω Pin Configuration DRAIN IDSS (min) 200m A Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSX BVDGX ±20V Operating and storage temperature -55OC to...