DN3125 Datasheet | Supertex

Features ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Tele Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature BVDSX BVDGX ± 20V -55°C to +150°C 12/13/01 Supertex Inc. does not remend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://.supertex.. For plete liability information on all Supertex...