o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices
Order Number I Package
TO-220
To-92
IRF520 IRF521 IRF522 IRF523
R520 R521
-
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate ma.
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IRF520 IRF521 IRF522 IRF523
R520 R521
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Preliminary
Ordering Information
BVossl BVDGS
IOOV 60V
100V 60V
RDS(ON)
(max)
0.30 0.30 0.40 0.40
ID(ON) (min)
8.0A 8.0A 7.0A 7.0A
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices
Order Number I Package
TO-220
To-92
IRF520 IRF521 IRF522 IRF523
R520 R521
-
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
R520 Datasheet
