TC0604 - Complementary Enhancement-Mode Vertical DMOS FET Quad Array
Supertex
Key Features
Order Number / Package SOW-20.
TC0604WG
Advanced DMOS Technology
s 4 independent channels s 4 electrically isolated die s Commercial and military versions available s Free from secondary breakdown s Low power drive requirement s Low CISS and fast switching speeds s High input impedance and high gain s Complementary N- and P-channel devices.
Complementary Enhancement-Mode Vertical DMOS Power FETs Quad Array
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TC0604 Low Threshold
Complementary Enhancement-Mode Vertical DMOS FET Quad Array
Ordering Information
BVDSS / BVDGS
RDS (ON) Max Q1 + Q2 or Q3 + Q4
40V 3.0Ω
* Same as SO-20 with 300 mil wide body.
Features
Order Number / Package SOW-20*
TC0604WG
Advanced DMOS Technology
s 4 independent channels s 4 electrically isolated die s Commercial and military versions available s Free from secondary breakdown s Low power drive requirement s Low CISS and fast switching speeds s High input impedance and high gain s Complementary N- and P-channel devices
Applications
These enhancement-mode (normally-off) DMOS FET arrays utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.