TC0604 Datasheet PDF

FEATURES

Order Number / Package SOW-20* TC0604WG Advanced DMOS Technology s 4 independent channels s 4 electrically isolated die s Commercial and military versions available s Free from secondary breakdown s Low power drive requirement s Low CISS and fast switching speeds s High input impedance and high gain s Complementary N- and P-channel devices

APPLICATIONS

These enhancement-mode (normally-off) DMOS FET arrays utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway an