TC6320 Datasheet | Supertex

Supertex inc. N- and P-Channel Enhancement-Mode MOSFET Pair Features - - Integrated GATE-to-SOURCE resistor - - Integrated GATE-to-SOURCE Zener diode - - Low threshold - - Low on-resistance - - Low input capacitance - - Fast switching speeds - - Free from secondary breakdown - - Low input and output leakage - - Independent, electrically isolated N- and P-channels Applications - - High voltage pulsers - - Amplifiers - - Buffers - - Piezoelectric transducer drivers - - General purpose line drivers - - Logic level interfaces General Description The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a plimentary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Typical Application Circuit VDD VH OE INA 10n F INB VSS 10n F VL Supertex MD12xx, MD17xx, or MD18xx +100V Supertex...