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TN06L - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices VGS(th) (max) 1.SV 1.SV T0-39 TNOS02N2 TNOS04N2 Order Number I Package TO-92 TNOS02N3 SOW-20' - TNOS04N3 TNOS04WG DICE TNOS02ND TNOS04ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a ve.

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Datasheet Details

Part number TN06L
Manufacturer Supertex
File Size 225.81 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN06L Datasheet
Additional preview pages of the TN06L datasheet.

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Full PDF Text Transcription

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"§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs TN06L Ordering Information BVoss I BVOGS 20V RDS(ON) (max) 0.750 40V 0.750 "Same as SO·20 with 300 mil wide body. ID(ON) (min) 4.0A 4.0A Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices VGS(th) (max) 1.SV 1.
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