TP02L - P-Channel Enhancement-Mode Vertical DMOS Power FETs
Supertex
Key Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h.
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
" !iupertexinc.
I
P-Channel Enhancement-Mode Vertical DMOS Power FETs
TP02L
Ordering Information
BVoss I BVOGS
-20V
-40V
ROS(ON)
(max)
2.0n
2.0n
IO(ON)
(min)
-2.0A
-2.0A
Order Number I Package
TO-39
TO-92
TP0202N2
TP0202N3
TP0204N2
TP0204N3
Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
TP02L Datasheet