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TP06A - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage TO.
  • 92 TP0606N3 TP0610N3 Order Number I Package TO.
  • 220 Quad P.
  • DIP TP0606NS TP0606N6 TP0610NS - Quad C.
  • DIP TP0606N7 - DICE TP0606ND TP0610ND Advanced CMOS Technology These enhancement-mode (normally-off) power transistors util.
  • ize a vertical DMOS structure and Supertex's well-proven silicongate manu.

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Datasheet Details

Part number TP06A
Manufacturer Supertex
File Size 233.23 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TP06A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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o §upertexinc. TP06A P-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVoss I ROS(ON) BVOGS (max) -60V 3.50 IO(ON) (min) -1.SA -100V 3.S0 -1.SA VGS(th) (max) -2.4V -2.4V TO·39 TP0606N2 TP0610N2 Features o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage TO·92 TP0606N3 TP0610N3 Order Number I Package TO·220 Quad P·DIP TP0606NS TP0606N6 TP0610NS - Quad C·DIP TP0606N7 - DICE TP0606ND TP0610ND Advanced CMOS Technology These enhancement-mode (normally-off) power transistors util· ize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.