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VN0640 - (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs

Download the VN0640 datasheet PDF. This datasheet also covers the VN0635 variant, as both devices belong to the same (vn0635 / vn0640) n-channel enhancement-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VN0635_Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN0640
Manufacturer Supertex
File Size 57.60 KB
Description (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN0640 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com VN0635 VN0640 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V † MIL visual screening available RDS(ON) (max) 10Ω 10Ω ID(ON) (min) 0.75A 0.75A Order Number / Package TO-92 VN0635N3 VN0640N3 Die† VN0635ND VN0640ND Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.