VN0645 Datasheet PDF

Supertex VN0645

The VN0650 is NOT recommended for new designs. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.

Part No.	VN0645
Datasheet	VN0645 Download
Manufacturer	Supertex
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
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FEATURES

s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Order Number / Package TO-39 TO-92 Die† VN0645N2 — — — VN0650N3 VN0650ND 7 Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

APPLICATIONS

s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maxi...