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VN2206 - N-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices ID(ON) (min) 8A 8A Order Number / Package TO-39 TO-92 Die† VN2206N2 VN2206N3 VN2206ND VN2210N2 VN2210N3 VN2210ND Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Sup.

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Datasheet Details

Part number VN2206
Manufacturer Supertex
File Size 26.81 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN2206 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VN2206 VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V 100V RDS(ON) (max) 0.35Ω 0.35Ω † MIL visual screening available Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices ID(ON) (min) 8A 8A Order Number / Package TO-39 TO-92 Die† VN2206N2 VN2206N3 VN2206ND VN2210N2 VN2210N3 VN2210ND Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.