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VP03E - P-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP03E
Manufacturer Supertex
File Size 226.87 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP03E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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,,§Upertexinc. VP03E P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss / BVOGS -450V -500V ROS(ON) (max) 7.50 7.50 IO(ON) (min) -1A -1A TO-3 VP0345Nl VP0350Nl Order Number / Package TO-39 TO-220 VP0345N2 VP0345N5 VP0350N2 VP0350N5 CICE VP0345ND VP0350ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.