o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.
o !iupertex inc.
VP05D
Ordering Information
BVoss '
BVOGS -350V -400V
ROS(ON)
(max)
750
750
P-Channel Enhancement-Mode Vertical DMOS Power FETs
IO(ON)
(min)
-200m A
-200mA
TO·39
Order Number' Package TO·92
VP0535N2
VP0535N3
VP0540N2
VP0540N3
DICE VP0535ND VP0540ND
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
VP05D Datasheet
