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VP05E - P-Channel Enhancement-Mode Vertical DMOS FETs

Datasheet Summary

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP05E
Manufacturer Supertex
File Size 224.43 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP05E Datasheet
Additional preview pages of the VP05E datasheet.

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Full PDF Text Transcription

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"§upertexinc. VP05E Ordering Information BVoss ' BVOGS -450V -500V ROS(ON) (max) 1250 1250 P-Channel Enhancement-Mode Vertical DMOS Power FETs IO(ON) (min) 100mA 100mA T()'39 Order Number' Package T()'92 VP0545N2 VP0545N3 VP0550N2 VP0550N3 DICE VP0545ND VP0550ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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