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VP01A - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP01A
Manufacturer Supertex
File Size 244.40 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VP01A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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" !iupertexinc. VP01A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoos -40V -60V -90V ROS(ON) (max) 8n 8n 8n jOlON) (min) -O.SA -O.SA -O.