SynSemi LL5711
SCHOTTKY BARRIER DIODES
FEATURES
:● For general purpose applications
● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
● This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263.
● Pb / RoHS Free φ 0.063 (1.64) 0.055 (1.40) 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.049 (1.25)Min. Mounting Pad Layout 0.098 (2.50) Max.
MECHANICAL DATA
: Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g 0.079 (2.00)Min. 0.197 (5.00) REF Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Value Repetitive Peak Reverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 µs Square Wave Junction Temperature Storage temperature ran...