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F29C51001B - 1M-Bit 5-Volt CMOS Flash Memory

Download the F29C51001B datasheet PDF. This datasheet also covers the F29C51001 variant, as both devices belong to the same 1m-bit 5-volt cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The F29C51001T/F29C51001B is a high speed 131,072 x 8 bit CMOS flash memory.

Features

  • s 128Kx8-bit Organization s Address Access Time: 45, 70, 90 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100µA (Max) s Hardware Data Protection s Low.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F29C51001_SyncMOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F29C51001B
Manufacturer SyncMOS
File Size 361.61 KB
Description 1M-Bit 5-Volt CMOS Flash Memory
Datasheet download datasheet F29C51001B Datasheet

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Other Datasheets by SyncMOS

Part Number Description
F29C51001T 1M-Bit 5-Volt CMOS Flash Memory
F29C51002B 2M-Bit CMOS Flash Memory
F29C51002T 2M-Bit CMOS Flash Memory

Full PDF Text Transcription

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SyncMOS F29C51001T/F29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 128Kx8-bit Organization s Address Access Time: 45, 70, 90 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.
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