Datasheet Summary
SyncMOS
F29C51001T/F29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
Features s 128Kx8-bit Organization s Address Access Time: 45, 70, 90 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors
- Sector-Erase Cycle Time: 10ms (Max)
- Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation
- Active Read Current: 20mA (Typ)
- Active Program Current: 30mA (Typ)
- Standby Current: 100µA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.2V s Self-timed program/erase operations with endof-cycle detection
- DATA Polling
- Toggle Bit s CMOS and TTL...