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F29C51001T

Manufacturer: SyncMOS

F29C51001T datasheet by SyncMOS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

F29C51001T datasheet preview

F29C51001T Datasheet Details

Part number F29C51001T
Datasheet F29C51001T F29C51001 Datasheet (PDF)
File Size 361.61 KB
Manufacturer SyncMOS
Description 1M-Bit 5-Volt CMOS Flash Memory
F29C51001T page 2 F29C51001T page 3

F29C51001T Overview

The F29C51001T/F29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing.

F29C51001T Key Features

  • Sector-Erase Cycle Time: 10ms (Max)
  • Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation
  • Active Read Current: 20mA (Typ)
  • Active Program Current: 30mA (Typ)
  • Standby Current: 100µA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.2V s Self-timed program/erase
  • DATA Polling
  • Toggle Bit s CMOS and TTL Interface s Available in two versions
  • F29C51001T (Top Boot Block)
  • F29C51001B (Bottom Boot Block) s Packages
  • 32-pin Plastic DIP
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More Datasheets from SyncMOS

View all SyncMOS datasheets

Part Number Description
F29C51001B 1M-Bit 5-Volt CMOS Flash Memory
F29C51002B 2M-Bit CMOS Flash Memory
F29C51002T 2M-Bit CMOS Flash Memory

F29C51001T Distributor

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